electron microscopy platform jeol 2100 f lab6 200kv Search Results


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JEOL jeol jem 2100f
Jeol Jem 2100f, supplied by JEOL, used in various techniques. Bioz Stars score: 99/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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Gatan Inc tridiem gif energy filter
Tridiem Gif Energy Filter, supplied by Gatan Inc, used in various techniques. Bioz Stars score: 98/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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JEOL jem-2100 transmission electron microscope
Jem 2100 Transmission Electron Microscope, supplied by JEOL, used in various techniques. Bioz Stars score: 99/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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JEOL jeol 2010 lab6 system
Jeol 2010 Lab6 System, supplied by JEOL, used in various techniques. Bioz Stars score: 97/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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NanoMEGAS libra 120
Libra 120, supplied by NanoMEGAS, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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Gatan Inc digitalmicrograph software
Digitalmicrograph Software, supplied by Gatan Inc, used in various techniques. Bioz Stars score: 93/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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NanoMEGAS digistar precession system
Setup for the <t>ASTAR</t> technique: electron diffraction patterns are collected while the beam is scanned over the sample. All patterns are compared to a set of precalculated templates to recognize the local orientation. Typical outputs are orientation/phase maps as well as virtual bright- or dark-field images.
Digistar Precession System, supplied by NanoMEGAS, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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JEOL transmission electron microscopy tem
Setup for the <t>ASTAR</t> technique: electron diffraction patterns are collected while the beam is scanned over the sample. All patterns are compared to a set of precalculated templates to recognize the local orientation. Typical outputs are orientation/phase maps as well as virtual bright- or dark-field images.
Transmission Electron Microscopy Tem, supplied by JEOL, used in various techniques. Bioz Stars score: 99/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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TVIPS GmbH f216 cmos camera
Setup for the <t>ASTAR</t> technique: electron diffraction patterns are collected while the beam is scanned over the sample. All patterns are compared to a set of precalculated templates to recognize the local orientation. Typical outputs are orientation/phase maps as well as virtual bright- or dark-field images.
F216 Cmos Camera, supplied by TVIPS GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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JEOL jsm 7600
Setup for the <t>ASTAR</t> technique: electron diffraction patterns are collected while the beam is scanned over the sample. All patterns are compared to a set of precalculated templates to recognize the local orientation. Typical outputs are orientation/phase maps as well as virtual bright- or dark-field images.
Jsm 7600, supplied by JEOL, used in various techniques. Bioz Stars score: 98/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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Hitachi Ltd sem
LPCVD synthesis of centimetre-sized uniform ultrathin 2H-TaS 2 films on Au foils. a Schematic illustration of the LPCVD growth process. <t>b</t> <t>XPS</t> peaks of Ta and S in as-grown 2H-TaS 2 , respectively. c – e Synchrotron radiation-based LEEM and μ-XPS elemental mapping of Ta (4f 7/2 ) and S (2p 3/2 ) acquired on consecutive areas of 20 × 20 μm 2 (synthesized at ~750 °C for ~10 min under Ar/H 2 (~100/10 sccm) carrier gases), confirming the formation of near triangular TaS 2 flakes. f Corresponding <t>SEM</t> image of as-grown 2H-TaS 2 flakes on Au foils. g AFM image and corresponding height profile of transferred 2H-TaS 2 flakes on SiO 2 /Si showing a nominal thickness of ~3 nm. h Large-area ultrathin 2H-TaS 2 film evolved on Au foils by further prolonging the growth time to ~20 min (with the other parameters keep identical to that of c , f ). i AFM height image of a transferred film edge presenting the same thickness as the initially evolved flakes, as evidenced by the inset height profile analysis (~3 nm). j Large-area OM image indicating the centimetre-size uniformity of the transferred 2H-TaS 2 film on SiO 2 /Si (synthesized at 750 °C for 20 min under Ar/H 2 (~100/10 sccm) carrier gases). Inset is the photograph of 2H-TaS 2 film on wafer-scale SiO 2 /Si. Scales bars, 5 µm in c – e , 10 µm in f , g , 20 µm in h , 50 µm in i and 0.5 mm in j
Sem, supplied by Hitachi Ltd, used in various techniques. Bioz Stars score: 99/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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Image Search Results


Setup for the ASTAR technique: electron diffraction patterns are collected while the beam is scanned over the sample. All patterns are compared to a set of precalculated templates to recognize the local orientation. Typical outputs are orientation/phase maps as well as virtual bright- or dark-field images.

Journal: Scanning

Article Title: Novel TEM Microscopy and Electron Diffraction Techniques to Characterize Cultural Heritage Materials: From Ancient Greek Artefacts to Maya Mural Paintings

doi: 10.1155/2019/4870695

Figure Lengend Snippet: Setup for the ASTAR technique: electron diffraction patterns are collected while the beam is scanned over the sample. All patterns are compared to a set of precalculated templates to recognize the local orientation. Typical outputs are orientation/phase maps as well as virtual bright- or dark-field images.

Article Snippet: For TEM and STEM-EDS (scanning transmission electron microscopy–energy-dispersive spectroscopy) observations, a TEM JEOL-2100F (FEG, 200 kV) and a LIBRA 120 (LaB 6 , 120 kV), both equipped with a DigiSTAR precession system and ASTAR phase/orientation mapping system (NanoMEGAS Sprl, Belgium) [ ], were used.

Techniques:

(a) Red sample from the mural of Round Temple. (b) Optical microscope view of the red pigment. (c) Area that was analyzed by TEM is shown. (d) TEM virtual bright field area where the analysis of phase mapping was done with ASTAR and is shown in (e). (f) Various phase percentages obtained with phase mapping are shown.

Journal: Scanning

Article Title: Novel TEM Microscopy and Electron Diffraction Techniques to Characterize Cultural Heritage Materials: From Ancient Greek Artefacts to Maya Mural Paintings

doi: 10.1155/2019/4870695

Figure Lengend Snippet: (a) Red sample from the mural of Round Temple. (b) Optical microscope view of the red pigment. (c) Area that was analyzed by TEM is shown. (d) TEM virtual bright field area where the analysis of phase mapping was done with ASTAR and is shown in (e). (f) Various phase percentages obtained with phase mapping are shown.

Article Snippet: For TEM and STEM-EDS (scanning transmission electron microscopy–energy-dispersive spectroscopy) observations, a TEM JEOL-2100F (FEG, 200 kV) and a LIBRA 120 (LaB 6 , 120 kV), both equipped with a DigiSTAR precession system and ASTAR phase/orientation mapping system (NanoMEGAS Sprl, Belgium) [ ], were used.

Techniques: Microscopy

LPCVD synthesis of centimetre-sized uniform ultrathin 2H-TaS 2 films on Au foils. a Schematic illustration of the LPCVD growth process. b XPS peaks of Ta and S in as-grown 2H-TaS 2 , respectively. c – e Synchrotron radiation-based LEEM and μ-XPS elemental mapping of Ta (4f 7/2 ) and S (2p 3/2 ) acquired on consecutive areas of 20 × 20 μm 2 (synthesized at ~750 °C for ~10 min under Ar/H 2 (~100/10 sccm) carrier gases), confirming the formation of near triangular TaS 2 flakes. f Corresponding SEM image of as-grown 2H-TaS 2 flakes on Au foils. g AFM image and corresponding height profile of transferred 2H-TaS 2 flakes on SiO 2 /Si showing a nominal thickness of ~3 nm. h Large-area ultrathin 2H-TaS 2 film evolved on Au foils by further prolonging the growth time to ~20 min (with the other parameters keep identical to that of c , f ). i AFM height image of a transferred film edge presenting the same thickness as the initially evolved flakes, as evidenced by the inset height profile analysis (~3 nm). j Large-area OM image indicating the centimetre-size uniformity of the transferred 2H-TaS 2 film on SiO 2 /Si (synthesized at 750 °C for 20 min under Ar/H 2 (~100/10 sccm) carrier gases). Inset is the photograph of 2H-TaS 2 film on wafer-scale SiO 2 /Si. Scales bars, 5 µm in c – e , 10 µm in f , g , 20 µm in h , 50 µm in i and 0.5 mm in j

Journal: Nature Communications

Article Title: Two-dimensional metallic tantalum disulfide as a hydrogen evolution catalyst

doi: 10.1038/s41467-017-01089-z

Figure Lengend Snippet: LPCVD synthesis of centimetre-sized uniform ultrathin 2H-TaS 2 films on Au foils. a Schematic illustration of the LPCVD growth process. b XPS peaks of Ta and S in as-grown 2H-TaS 2 , respectively. c – e Synchrotron radiation-based LEEM and μ-XPS elemental mapping of Ta (4f 7/2 ) and S (2p 3/2 ) acquired on consecutive areas of 20 × 20 μm 2 (synthesized at ~750 °C for ~10 min under Ar/H 2 (~100/10 sccm) carrier gases), confirming the formation of near triangular TaS 2 flakes. f Corresponding SEM image of as-grown 2H-TaS 2 flakes on Au foils. g AFM image and corresponding height profile of transferred 2H-TaS 2 flakes on SiO 2 /Si showing a nominal thickness of ~3 nm. h Large-area ultrathin 2H-TaS 2 film evolved on Au foils by further prolonging the growth time to ~20 min (with the other parameters keep identical to that of c , f ). i AFM height image of a transferred film edge presenting the same thickness as the initially evolved flakes, as evidenced by the inset height profile analysis (~3 nm). j Large-area OM image indicating the centimetre-size uniformity of the transferred 2H-TaS 2 film on SiO 2 /Si (synthesized at 750 °C for 20 min under Ar/H 2 (~100/10 sccm) carrier gases). Inset is the photograph of 2H-TaS 2 film on wafer-scale SiO 2 /Si. Scales bars, 5 µm in c – e , 10 µm in f , g , 20 µm in h , 50 µm in i and 0.5 mm in j

Article Snippet: The samples were characterized by OM (Olympus BX51), SEM (Hitachi S-4800, 2 kV), XPS (Kratos Analytical AXIS-Ultra with monochromatic Al Kα X-ray), XRD (Shimadzu Thin Film, using Cu Kα radiation at room temperature in the 2θ range of 10 ~ 90°), Raman spectroscopy (Renishaw, Invia Reflex, excitation light of ~514 nm), TEM (JEOL JEM-2100F LaB6; acceleration voltage, 200 kV), and AFM (Dimension Icon, Bruker).

Techniques: Synthesized

APCVD growth and characterization of 2H-TaS 2 hexagonal flakes. a Schematic illustration of the APCVD growth process. b XPS peaks for Ta and S confirming the formation of 2H-TaS 2 on Au foils. c XRD pattern of transferred 2H-TaS 2 on SiO 2 /Si showing its 2H phase feature. d – g SEM and corresponding AFM images showing the tunable thicknesses of hexagonal 2H-TaS 2 domains by varying growth time from ~3 to ~5 min (synthesized at 750 °C under Ar/H 2 (~100/10 sccm) carrier gases), respectively. h Plot of the thickness of 2H-TaS 2 as a function of growth time. Error bars are defined as s.d. Scale bars, 4 µm in d , e and 10 µm in f , g

Journal: Nature Communications

Article Title: Two-dimensional metallic tantalum disulfide as a hydrogen evolution catalyst

doi: 10.1038/s41467-017-01089-z

Figure Lengend Snippet: APCVD growth and characterization of 2H-TaS 2 hexagonal flakes. a Schematic illustration of the APCVD growth process. b XPS peaks for Ta and S confirming the formation of 2H-TaS 2 on Au foils. c XRD pattern of transferred 2H-TaS 2 on SiO 2 /Si showing its 2H phase feature. d – g SEM and corresponding AFM images showing the tunable thicknesses of hexagonal 2H-TaS 2 domains by varying growth time from ~3 to ~5 min (synthesized at 750 °C under Ar/H 2 (~100/10 sccm) carrier gases), respectively. h Plot of the thickness of 2H-TaS 2 as a function of growth time. Error bars are defined as s.d. Scale bars, 4 µm in d , e and 10 µm in f , g

Article Snippet: The samples were characterized by OM (Olympus BX51), SEM (Hitachi S-4800, 2 kV), XPS (Kratos Analytical AXIS-Ultra with monochromatic Al Kα X-ray), XRD (Shimadzu Thin Film, using Cu Kα radiation at room temperature in the 2θ range of 10 ~ 90°), Raman spectroscopy (Renishaw, Invia Reflex, excitation light of ~514 nm), TEM (JEOL JEM-2100F LaB6; acceleration voltage, 200 kV), and AFM (Dimension Icon, Bruker).

Techniques: Synthesized